cul

英 [ˈkʌl]

美 [ˈkʌl]

网络  加拿大; 库利亚坎; 美国; 文化

英英释义

noun

• a passage with access only at one end
  Synonym:cul de sacdead end

双语例句

• At the end of20th century, at home and abroad a lot of studies have been made in enterprise cul ˉ ture ( EC), and fruitful results have been accomplished.
  20世纪末，国内外对企业文化进行了大量的研究，取得了很大成果。
• But because of the current and economic system environment, Social Construction CharacteriZes that our country, tradition of Political cul ture, current benefits structural etc. the factors influence invite with system facing the layer after layer obstacle.
  但由于我国现有的经济体制环境、社会结构特点、传统的政治文化传统和习惯、现有的利益格局等因素的影响和制约而面临着重重障碍。
• The profit main part position of labourer in an enterprise should be established, and the masters 'working system should be carried cul.
  应确立劳动者在企业中的利益主体地位，实行主人劳动制。
• Preparation and Optical Properties of Cul Microcrystal Doped Silicate Glasses
  碘化亚铜微晶掺杂硅酸盐玻璃的制备及其光学性质
• The formation of meristematic nodules in a common feature in developing callus cul-ture and they are originated at random from solitary parenchymatous cells, which by means of dedifferentiation have become meristematic in character.
  愈伤组织培养中普遍地有分生组织结节的存在，它起源于个别薄壁细胞经脱分化而来。
• 3/ replacing the metaphysical way with cul-tural study and discourse analysis.
  在研究方法方面，用文化的研究和话语的分析取代形而上学的方法。
• Comparison of the expression and activity of phosphatidylethanolamine N-methyltransferase 2 between primary cul-tured hepatocytes and hepatoma cells in rats
  肝细胞与肝癌细胞中磷脂酰乙醇胺N-甲基转移酶2表达及活性的比较
• The result showed Cul combined to amino acids at the beginning of the reaction. As the ligand, amino acids also promoted the reaction.
  研究结果表明该反应最开始是催化剂CuI与氨基酸结合，氨基酸在这里担当配体，对反应的进行起到了很好的促进作用。
• A modified Roux en Y anastomosis was developed, which can prevent injury of hepatic portal vein during operation, and cul de sac syndrome after operation.
  提出改良胆肠Roux－en－Y吻合术，它有防止术中门静脉损伤及术后出现盲端综合征的明显优点。
• Results shew that the combined gettering technology not only improves effectively the τ g of N/ N+ silicon epitaxial wafers and reduces evidently the density of surface defects on the epitaxial layers, but also gives no influences on the resistivity distribution cul the silicon wafer profiles.
  结果表明，综合吸除技术不仅能有效地改善W／N＋硅外延片的电性能（τg）和明显地降低外延层上的表面缺陷密度，而且对硅片剖面的电阻率分布也无影响。